The relentless pursuit of “third generation” infrared detectors—demanding higher pixel density, lower cost, larger array size, higher operating temperature, and multiband detection—faces significant hurdles with HgCdTe materials grown on traditional CdZnTe substrates. These limitations stem from the inherent challenges in achieving high crystal quality, impacting device yield and array format size.

This book presents a comprehensive exploration of lattice-mismatched epitaxy as a transformative solution. It delves into the theoretical underpinnings and experimental techniques necessary to:

• Suppress the generation of misfit dislocations
• Control the propagation of misfit dislocations
• Reduce the density of misfit dislocations in epitaxial layers

Using HgCdTe detectors grown on alternative substrates like Si, Ge, GaAs, and GaSb as a test vehicle, the book showcases the practical application of these concepts. While focusing on the advancements in third-generation IR sensors, the principles and methods discussed are broadly applicable to other semiconductor materials and devices. Readers will gain valuable insights and techniques for achieving high-quality semiconductors on lattice-mismatched substrates, extending the book’s reach beyond the realm of IR detectors.